(Electronics Project) Application of Porous Silicon in Terahertz Technology

In this study, we discuss our efforts in developing porous silicon based devices for terahertz signal processing. In the first stage of our research, we demonstrate that porous silicon samples fabricated from highly doped p-type silicon can have adjustable refractive indices ranging from 1.5-2.1 and can exhibit a resistivity that is four orders of magnitude higher than that of the silicon wafer from which they were made.